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SSM6K22FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
SSM6K22FE
High Current Switching Applications DC-DC Converter
* * Suitable for high-density mounting due to compact package Low on resistance: Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 12 1.4 5.6 500 150 -55~150 Unit V V A mW C C
1,2,5,6 : Drain 3 : Gate 4 : Source
JEDEC JEITA TOSHIBA
2-2N1A
Note:
Using continuously under heavy loads (e.g. the application of Weight: 3 mg (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Marking
6 5 4
Equivalent Circuit (Top View)
6 5 4
KD
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS =20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.6A ID = 0.7 A, VGS = 4 V ID = 0.7 A, VGS = 2.5 V ( 2) ( 2) ( 2) Min Typ. Max Unit A V A V S m pF pF pF ns
- 20 12 - 0.4 1.4 - - - - - - -
- - - - - 2.8 150 190 125 17 42 15.5 8.5
1 - - 1 1.1 - 170 230 - - - - -
VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.7 A
VGS = 0~2.5 V, RG = 4.7
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V 0 10 s IN RG OUT 0V 10%
(b) VIN
2.5 V
90%
(c) VOUT
VDD
VDD
90% 10% tr ton toff tf
VDD = 10 V RG = 4.7 < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C
VDS (ON)
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device.
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ID - V D S
2.5
ID - V G S
10000
4.0V
2.0 Drain current I D (mA)
2.5V 2.0V
Common Source Ta=25
1000
Common Source VDS =3V
Drain current I D (mA)
100
1.5
Ta=85
10
25
VGS =1.8V
1.0
1
-25
0.5
0.1
0.0 0.0 0.5 1.0 Drain-Source voltage V DS (V) 1.5 2.0
0.01 0 1 2 Gate-Source voltage V GS (V) 3 4
R D S (O N) - I D
500
R D S(O N) - V G S
0.5
Common Source Ta=25
400 Drain-Source on-resistance
Common Source I D=0.7A
0.4 Drain-Source on-resistance
R DS(ON) (m)
RDS(ON) ()
300
0.3
200
2.5V VGS =4.0V
0.2
25 Ta=85
100
0.1
-25
0 0 0.5 1 1.5 2 2.5 Drain current I D (A)
0 0 2 4 Gate-Source voltage V GS (V) 6 8
R D S (O N) - Ta
0.5
V th - Ta
2
Common Source I D=0.7A
0.4 Drain-Source on-resistance
1.8 1.6 1.4 Gate threshold voltage Vth(V)
Common Source I D=0.1mA VDS =3V
RDS(ON) ()
0.3
1.2 1 0.8 0.6 0.4 0.2
0.2
2.5V
0.1
4.0V
0 -25 0 25 50 75 100 125 150
0 -25 0 25 50 75 100 125 150
Ambient temperture Ta ()
Ambient temperture Ta ()
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SSM6K22FE
|Yfs| - ID
100
C - VDS
1000
Common Source VDS=-3V Ta=25
Forward transfer admittance |Yfs| (S) 10
Capacitance C (pF)
100
C iss
1
C oss C rss
10
0.1
Common Source VGS =0V f=1MHz Ta=25
1
0.01 0.001
0.01
0.1 Drain current ID (A)
1
10
0.1
1
10
100
Drain-Source voltage V DS (V)
ID R - V D S
2.5
1000
t - ID
Common Source VDD=10V
100
2 Drain reverse current I DR (mA)
Common Source VGS =0 Ta=25
Switching time t (ns)
toff tf ton
VGS =02.5V Ta=25
1.5
tr
10
1
0.5
1
0 0 -0.2 -0.4 -0.6 -0.8 -1 Drain-Source voltage V DS (V)
0.1 0.01
0.1 Drain current I D (A)
1
10
Dyn a mic In p u t Ch a racteristic
10
Common Source VDD=10V
8 Gate-Source voltage V GS (V)
I D=1.4A Ta=25
6
4
2
0 0 0.5 1 1.5 2 2.5 3 3.5
Tatal gate charge Q g (nC)
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SSM6K22FE
S a fe o p era tin g area
10
I D max (Pulsed) *
1ms
1 Drain current I D (A)
I D max (Continuous) 100ms DC operation Ta=25
10ms
0.1
Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t Cu pad: 645 mm2 )
0.01
*:Single nonrepetive Pulse Ta 25C Curves must be derated linealy with increase in temperture.
0.001 0.1 1 10 100 Drain-Source voltage V DS (V)
P D - Ta
600
FR4 (25.4mmx25.4mmx1.6t) Cu pad645mm2
500 Drain power dissipationP D (mW)
400
300
200
100
0 0 20 40 60 80 100 120 140
Ambient temperature Ta ()
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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